Nucleation and Growth Modes of ALD ZnO
Zsófia Baji,*,† Zoltán Lábadi,† Zsolt E. Horváth,† György Molnár,† János Volk,† István Bársony,†,‡ and Péter Barna†
2012
†Research Centre for Natural Sciences, Institute for Technical Physics and Materials Science, Konkoly Thege M. út 29-33, H-1121
Budapest, Hungary
‡Faculty of Information Technology, University of Pannonia, Egyetem u.10, Veszprém, H- 8200 Hungary
ABSTRACT: The initial phases of the ALD growth of ZnO have been examined. It is shown that ZnO exhibits an island-like growth on Si, layer-by-layer on GaN, whereas on sapphire, the growth mode can be tuned by the deposition temperature. A new method for depositing ultrathin smooth polycrystalline films is presented. The growth rates on different substrates and at different deposition temperatures were analyzed, and the possibility of epitaxial growth was also examined.
