18 eredmény a kulcsszóra: 'band gap of gaas'
Change of primary particle size, band gap energy values and emission maxima of particles with zinc ion concentration and indium ion/zinc ion
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The pronounced decrease of the band gap of titanate nanowires upon loading with Au suggests a very strong electronic interaction between the titanate nanostructure framework and
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The AC decreased the primary crystallite size and band gap of the samples which further supports the high performance of AC/BiOCl composites than pure BiOCl under UV
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Recently, it was found that doping LiInO 2 with Mo 6+ ions can greatly enhance the degradation of methylene blue under visible light irradiation by tailoring the band-gap of LiInO
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degradation efficiency for both the pollutants (phenol and RhB) under visible light. 9, it is clear that as the band gap energy of the composites is increased, the
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Lastly, it is important to mention that although samples H2_HS_5 and H2_HS_6 possessed very similar characteristic properties (high rutile content, similar morphology, band
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showed visible light absorption properties (including the fact that their band-gap values were in the visible light region), no visible light activity was observable, neither in
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During implantation several crystal defects are created: vacancies, interstitials and anti-sites, which can form electron or hole traps by deep levels in the band gap reducing
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(2) Higher power klystrons were available at L band than S band to compensate for the lower shunt impedance of the L band accelerating guides. 2 Other advantages of L band are
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Since all gap single mutants and all gap double mutant worms (except the gap-1;gap-3 mutants) showed no or minor defect in chemotaxis or motility, next the role of different
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This is the reason why we be- lieve that silicon carbide (SiC), a material with indirect band gap with negligible photon emission efficiency in the visible wavelengths can be
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We can observe (see Fig. 1) that the decay time constant of oscillations τ d decreases rapidly during the LT-GaAs growth with increasing of As-to-Ga ratio, that is, also
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In this work, the crystal quality and its impact on optical prop- erties of ZnSnN 2 epitaxial layers were investigated. The main conclusions of this work are; i) HiPIMS growth
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The speculative attack of January 2003 against the forint’s band was different from earlier speculation aimed at forcing a shift in the band in the former narrow band exchange
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However, the diffusion of gold to the semiconductor interface can be disadvantageous because it greatly enhances the decomposition of InP (and GaAs, as well). One way
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Microwave Noise in GaAs Planar-Doped Barrier Diodes Lithuanian.. Van Tuyen
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This subroutine computes the quantized difference in signal value in the higher sub-band encoder and decoder, based on the higher sub-band quantizer scale factor and the higher
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